MURF40010
DIODE MODULE GP 100V 200A TO244Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURF40010 is a high-power diode module featuring a common cathode configuration. This device offers a maximum DC reverse voltage of 100 V and a substantial average rectified current rating of 200 A per diode. The forward voltage drop is specified at a maximum of 1 V at 200 A. With a reverse leakage current of 25 µA at 100 V, this module is designed for demanding applications. The TO-244AB package facilitates chassis mounting for efficient thermal management, operating across a junction temperature range of -55°C to 150°C. The MURF40010 is engineered for fast recovery, with a typical reverse recovery time of 150 ns, making it suitable for power supply, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-244AB |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | TO-244 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 100 V |
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