MURF20020R
DIODE MODULE GP 200V 100A TO244Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURF20020R is a high-performance diode module featuring a common anode configuration with two diodes. This device offers a maximum DC reverse voltage of 200V and an average rectified current capability of 100A per diode. The forward voltage drop is rated at a maximum of 1.3V at 100A. Designed for robust operation, it exhibits a reverse leakage current of 25µA at 50V and a reverse recovery time of 75ns, classifying it as a fast recovery diode. The module is housed in a TO-244AB package, facilitating chassis mounting for efficient thermal management. Operating across a junction temperature range of -55°C to 150°C, the MURF20020R is suitable for demanding applications in power electronics, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-244AB |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Supplier Device Package | TO-244 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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