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MURF20020R

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MURF20020R

DIODE MODULE GP 200V 100A TO244

Manufacturer: GeneSiC Semiconductor

Categories: Diode Arrays

Quality Control: Learn More

GeneSiC Semiconductor MURF20020R is a high-performance diode module featuring a common anode configuration with two diodes. This device offers a maximum DC reverse voltage of 200V and an average rectified current capability of 100A per diode. The forward voltage drop is rated at a maximum of 1.3V at 100A. Designed for robust operation, it exhibits a reverse leakage current of 25µA at 50V and a reverse recovery time of 75ns, classifying it as a fast recovery diode. The module is housed in a TO-244AB package, facilitating chassis mounting for efficient thermal management. Operating across a junction temperature range of -55°C to 150°C, the MURF20020R is suitable for demanding applications in power electronics, industrial motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-244AB
Mounting TypeChassis Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75 ns
TechnologyStandard
Diode Configuration1 Pair Common Anode
Current - Average Rectified (Io) (per Diode)100A
Supplier Device PackageTO-244
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 A
Current - Reverse Leakage @ Vr25 µA @ 50 V

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