MURF20010R
DIODE MODULE GP 100V 100A TO244Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURF20010R is a diode module featuring a single pair of common anode diodes within a TO-244AB package. This device offers a maximum DC reverse voltage of 100V and an average rectified current of 100A per diode. The forward voltage drop is 1.3V at 100A, with a reverse leakage of 25 µA at 50V. Engineered for fast recovery characteristics, the MURF20010R exhibits a reverse recovery time (trr) of 75 ns. Designed for chassis mounting, this component operates across a junction temperature range of -55°C to 150°C. It finds application in power electronics, industrial motor control, and power supply systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-244AB |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Supplier Device Package | TO-244 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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