MURF20010
DIODE MODULE GP 100V 100A TO244Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURF20010 is a diode module featuring a 1 pair common cathode configuration within a TO-244AB package. This device offers a maximum DC reverse voltage of 100V and an average rectified current handling capability of 100A per diode. The forward voltage drop (Vf) is specified at 1.3V at 100A. Engineered for efficient operation, the MURF20010 exhibits a reverse leakage current of 25 µA at 50V and a reverse recovery time (trr) of 75 ns, classifying it within fast recovery diodes. Its chassis mount design and operating temperature range of -55°C to 150°C make it suitable for demanding applications in power conversion, industrial motor control, and renewable energy systems. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-244AB |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Supplier Device Package | TO-244 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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