MUR2X030A10
DIODE MODULE GP 1000V 30A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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The GeneSiC Semiconductor MUR2X030A10 is a high-performance diode module featuring two independent diodes within a SOT-227-4 miniBLOC package. This device offers a maximum repetitive reverse voltage (Vr) of 1000V and an average rectified current (Io) of 30A per diode. With a typical forward voltage (Vf) of 2.35V at 30A, it exhibits efficient power conversion. The fast recovery time of 85ns contributes to reduced switching losses. Designed for chassis mounting, this module operates across a wide junction temperature range of -55°C to 175°C. The low reverse leakage current of 25 µA at 1000 V ensures minimal standby power consumption. This component is suitable for applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 85 ns |
| Technology | Standard |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 30A |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 2.35 V @ 30 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 1000 V |
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