MBRTA80080R
DIODE MOD SCHOTT 80V 400A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA80080R is a Schottky diode module featuring a common anode configuration. This component offers a DC reverse voltage rating of 80V and a substantial average rectified current capability of 400A per diode. The forward voltage drop at 400A is specified at 840mV, with a reverse leakage current of 1mA at 80V. Designed for robust performance, it operates across a junction temperature range of -55°C to 150°C. The module utilizes a Three Tower chassis mount package, facilitating efficient thermal management. Its fast recovery characteristics, with a speed of less than or equal to 500ns for currents greater than 200mA, make it suitable for high-power applications in industries such as industrial power supplies and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 400A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 400 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 80 V |
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