MBRTA80035
DIODE MOD SCHOTT 35V 400A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA80035 is a high-performance diode array featuring a common cathode configuration with two Schottky diodes. This component offers a 35V reverse voltage capability and a significant 400A average rectified current per diode. The forward voltage drop at maximum current is specified at 720mV, and it exhibits a reverse leakage of 1mA at 35V. Designed for robust thermal management, the MBRTA80035 utilizes a Three Tower chassis mount package, ensuring efficient heat dissipation. Its operating junction temperature range is -55°C to 150°C. The fast recovery time, below 500ns for currents greater than 200mA, makes it suitable for demanding power electronic applications across various industrial sectors including power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 400A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 720 mV @ 400 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V |
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