MBRTA80030
DIODE MOD SCHOTT 30V 400A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA80030 is a Schottky diode module featuring a common cathode configuration with two diodes. This component is rated for a maximum DC reverse voltage of 30V and an average rectified current of 400A per diode. The forward voltage drop is a maximum of 720mV at 400A. Reverse leakage is specified at 1mA at 30V. The MBRTA80030 is designed for chassis mounting and utilizes a Three Tower package. Operating junction temperatures range from -55°C to 150°C. This device is suitable for applications in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 400A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 720 mV @ 400 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 30 V |
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