MBRTA800100R
DIODE MOD SCHOT 100V 400A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA800100R is a Schottky diode module featuring a common anode configuration. This device offers a maximum DC reverse voltage (Vr) of 100 V and a substantial average rectified current (Io) per diode of 400 A. The forward voltage (Vf) is rated at 840 mV at 400 A, with a reverse leakage of 1 mA at 100 V. Designed for efficient power rectification, this module operates across a junction temperature range of -55°C to 150°C. Its three-tower chassis mount package facilitates robust thermal management. The MBRTA800100R is suitable for high-power applications in industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 400A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 400 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 100 V |
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