MBRTA800100
DIODE MOD SCHOT 100V 400A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA800100 is a high-performance diode array featuring a common cathode configuration with two Schottky diodes. This component is rated for a maximum DC reverse voltage (Vr) of 100 V and delivers an impressive average rectified current (Io) of 400 A per diode. The forward voltage drop (Vf) is specified at 840 mV at 400 A, with a reverse leakage current of 1 mA at 100 V. Designed for demanding applications, it offers fast recovery characteristics (<= 500 ns, > 200 mA Io). The MBRTA800100 is chassis mounted within a robust Three Tower package, suitable for industrial power supplies, electric vehicle charging, and renewable energy systems. Its operating junction temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 400A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 400 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 100 V |
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