MBRTA60060R
DIODE MOD SCHOTT 60V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA60060R is a high-performance Schottky diode array featuring a common anode configuration. This component, housed in a robust Three Tower package for efficient heat dissipation, offers a maximum DC reverse voltage of 60V and an average rectified current capability of 300A per diode. The forward voltage drop is specified at 750mV at 300A, with a low reverse leakage current of 1mA at 60V. Designed for demanding applications, its fast recovery time is less than 500ns for currents exceeding 200mA. The operating junction temperature range is -55°C to 150°C, making it suitable for industrial power supplies, electric vehicle charging, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 750 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 60 V |
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