MBRTA60035L
DIODE MOD SCHOTT 35V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA60035L is a Schottky diode array featuring a 1 pair common cathode configuration. This component is designed for chassis mounting and utilizes a Three Tower package. It offers a maximum DC reverse voltage of 35 V and a low forward voltage drop of 600 mV at a significant 300 A forward current. The average rectified current per diode is rated at 300 A, with a reverse leakage of 3 mA at 35 V. Operating across a junction temperature range of -55°C to 150°C, this device is suitable for applications requiring high current handling and fast switching characteristics, often found in power supply and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 35 V |
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