MBRTA60035
DIODE MOD SCHOTT 35V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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The GeneSiC Semiconductor MBRTA60035 is a high-performance diode module featuring a common cathode configuration with two Schottky diodes. This component offers a maximum DC reverse voltage of 35V and an average rectified current of 300A per diode. Its low forward voltage drop is 700mV at 300A, and it exhibits a reverse leakage current of 1mA at 35V. Designed for robust operation, the MBRTA60035 operates across a junction temperature range of -55°C to 150°C. The device is housed in a Three Tower chassis mount package, facilitating efficient thermal management. This diode array is well-suited for demanding applications in power distribution, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V |
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