MBRTA60030RL
DIODE MOD SCHOTT 30V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA60030RL is a Schottky diode module featuring a 1 pair common anode configuration. This component offers a maximum DC reverse voltage (Vr) of 30V and a substantial forward current handling capability of 300A per diode, with a typical forward voltage (Vf) of 580mV at 300A. The device exhibits a reverse leakage current of 1mA at 30V. Designed for robust performance, it operates across a junction temperature range of -55°C to 150°C. The MBRTA60030RL is presented in a Three Tower package, suitable for chassis mounting. Its fast recovery characteristics, with speeds less than or equal to 500ns for currents greater than 200mA, make it well-suited for applications in power factor correction, switch mode power supplies, and high-frequency power conversion.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 30 V |
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