MBRTA60030R
DIODE MOD SCHOTT 30V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
Quality Control: Learn More
GeneSiC Semiconductor MBRTA60030R Schottky Diode Module. This component features a common anode configuration with two diodes, rated for 30V reverse voltage and 300A average rectified current per diode. The forward voltage drop is 700mV at 300A, with a reverse leakage of 1mA at 30V. Designed for high-power applications, this module utilizes a Schottky barrier technology for fast switching characteristics. Its robust Three Tower chassis mount package ensures effective thermal management. Operating junction temperature ranges from -55°C to 150°C. Applications include power factor correction, industrial power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 30 V |
Request a Quote
Clients Also Buy
FST16030L
DIODE MOD SCHOTT 30V 80A TO249AB
GC2X8MPS12-247
DIODE ARR SIC 1200V 40A TO247-3
MURF30040
DIODE MODULE GP 400V 150A TO244
