MBRTA60030
DIODE MOD SCHOTT 30V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA60030 is a high-performance Schottky diode array featuring a common cathode configuration. This three-tower, chassis-mount component offers a robust 30V reverse voltage and an impressive 300A average rectified current per diode. Its low forward voltage drop of 700mV at 300A, coupled with a 1mA reverse leakage at 30V, ensures efficient operation. Designed for demanding applications, the MBRTA60030 operates across a junction temperature range of -55°C to 150°C. The fast recovery characteristics, with speeds less than or equal to 500ns for currents greater than 200mA, make it suitable for power switching and rectification in industrial power supplies, electric vehicle charging, and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 30 V |
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