MBRTA600200R
DIODE MOD SCHOT 200V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA600200R is a Schottky diode module featuring a 1 Pair Common Anode configuration. This component offers a maximum DC reverse voltage (Vr) of 200 V and an average rectified current (Io) per diode of 300 A. The forward voltage (Vf) is specified at 920 mV at 300 A, with a reverse leakage current of 4 mA at 200 V. Designed for robust performance, it operates across a junction temperature range of -55°C to 150°C. The MBRTA600200R utilizes a Three Tower package for chassis mounting, facilitating efficient thermal management. Its fast recovery characteristic, with a speed of less than or equal to 500 ns for currents greater than 200 mA, makes it suitable for demanding power conversion applications in industries such as industrial automation and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 4 mA @ 200 V |
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