MBRTA600200
DIODE MOD SCHOT 200V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA600200 is a diode module featuring a 1 Pair Common Cathode configuration. This Schottky diode array offers a maximum DC reverse voltage (Vr) of 200 V and an average rectified current (Io) per diode of 300 A. The forward voltage (Vf) is specified at 920 mV at 300 A. Reverse leakage current is 4 mA at 200 V. It is designed for chassis mounting within a Three Tower package. The operating junction temperature range is -55°C to 150°C. This component is suitable for power supply applications, motor control, and electric vehicle charging infrastructure where high current rectification and efficient switching are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 4 mA @ 200 V |
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