MBRTA60020
DIODE MOD SCHOTT 20V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA60020 is a high-performance diode array featuring a common cathode configuration. This component is designed for demanding power applications, offering a maximum DC reverse voltage of 20V and an average rectified current of 300A per diode. The forward voltage drop is a nominal 700mV at 300A, indicative of its Schottky technology for efficient power conversion. With a reverse leakage current of 1mA at 20V, it ensures minimal standby power consumption. The MBRTA60020 is built for robust operation, with an operating junction temperature range of -55°C to 150°C. Its chassis mountable Three Tower package facilitates effective thermal management. This device finds application in various industrial sectors, including power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 20 V |
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