MBRTA600150R
DIODE MOD SCHOT 150V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA600150R is a Schottky diode module featuring a common anode configuration with a 150V reverse voltage rating and 300A average rectified current per diode. This device utilizes a three-tower chassis mount package for efficient thermal management. The forward voltage drop is specified at 880mV at 300A, with a reverse leakage of 4mA at its maximum reverse voltage. Designed for robust performance, it operates across a junction temperature range of -55°C to 150°C. The MBRTA600150R is suitable for high-power applications in industries such as industrial motor drives, power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 4 mA @ 150 V |
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