MBRTA600100R
DIODE MOD SCHOT 100V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA600100R is a Schottky diode array featuring a common anode configuration with two diodes. This component offers a reverse voltage rating of 100V and a forward current handling capability of 300A per diode. Engineered for robust performance, it exhibits a low forward voltage drop of 840mV at 300A and a reverse leakage of 1mA at 100V. The diode array is constructed with fast recovery characteristics, specified as less than 500ns for an average rectified current (Io) greater than 200mA. Its chassis mount design and Three Tower package facilitate efficient thermal management in demanding applications. The MBRTA600100R is suitable for use in power supply rectification, motor control, and industrial power systems where high current and efficient switching are critical. It operates across a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 100 V |
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