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MBRTA50060

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MBRTA50060

DIODE MOD SCHOTT 60V 250A 3TOWER

Manufacturer: GeneSiC Semiconductor

Categories: Diode Arrays

Quality Control: Learn More

The GeneSiC Semiconductor MBRTA50060 is a high-performance diode module featuring a common cathode configuration. This component provides a 60V reverse voltage capability with a significant 250A average rectified forward current per diode. Its Schottky technology ensures low forward voltage drop, specified at 750mV maximum at 250A, and a low reverse leakage current of 1mA at 60V. Designed for robust industrial applications, the MBRTA50060 operates across a junction temperature range of -55°C to 150°C. The module is chassis mounted and packaged in a convenient Three Tower configuration, suitable for demanding power electronics and electric vehicle charging systems. Its fast recovery characteristic, with a speed rating of <= 500ns, makes it ideal for high-frequency switching applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseThree Tower
Mounting TypeChassis Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologySchottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)250A
Supplier Device PackageThree Tower
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)60 V
Voltage - Forward (Vf) (Max) @ If750 mV @ 250 A
Current - Reverse Leakage @ Vr1 mA @ 60 V

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