MBRTA50035R
DIODE MOD SCHOTT 35V 250A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA50035R is a high-performance Schottky diode module featuring a common anode configuration with two diodes sharing a common cathode. This device offers a maximum DC reverse voltage of 35V and an average rectified current of 250A per diode. The forward voltage drop is a remarkably low 700mV at 250A, indicative of its efficient power handling. Designed for demanding applications, it boasts a fast recovery time of less than 500ns. The module utilizes a robust three-tower package for effective chassis mounting and thermal management, operating across a junction temperature range of -55°C to 150°C. Reverse leakage current is specified at 1mA at 35V. This component is well-suited for power supply, industrial motor control, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 250A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 250 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V |
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