MBRTA50030R
DIODE MOD SCHOTT 30V 250A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA50030R is a diode array featuring a common anode configuration. This component offers a 30V reverse voltage (Vr) and a substantial 250A average rectified current (Io) per diode. Its Schottky technology ensures efficient performance with a low forward voltage (Vf) of 700mV at 250A. Designed for demanding applications, the MBRTA50030R exhibits a fast recovery time of less than 500ns for currents greater than 200mA. The device is housed in a robust Three Tower package for chassis mounting, facilitating efficient thermal management. Operating across a junction temperature range of -55°C to 150°C, this diode array is suitable for use in power supply, motor control, and renewable energy systems. The reverse leakage current is rated at 1mA at 30V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 250A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 250 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 30 V |
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