MBRTA500100R
DIODE MOD SCHOT 100V 250A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA500100R is a Schottky diode module featuring a common anode configuration with two diodes. This component offers a maximum DC reverse voltage (Vr) of 100V and a high average rectified current (Io) per diode of 250A. The forward voltage drop (Vf) is specified at 840mV at 250A. Designed for robust performance, it exhibits a reverse leakage current of 1 mA at 100V and operates across a junction temperature range of -55°C to 150°C. The module is housed in a Three Tower package for efficient heat dissipation and chassis mounting. Its fast recovery time, characterized as <= 500ns for currents > 200mA, makes it suitable for applications in high-power industrial systems, electric vehicle charging, and renewable energy power conversion where efficient switching and high current handling are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 250A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 250 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 100 V |
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