MBRTA40035RL
DIODE MOD SCHOTT 35V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
Quality Control: Learn More
GeneSiC Semiconductor MBRTA40035RL is a diode array featuring a 1 pair common anode configuration. This Schottky diode array offers a maximum DC reverse voltage (Vr) of 35 V and an average rectified current (Io) per diode of 200 A. The forward voltage drop (Vf) is a maximum of 600 mV at 200 A. Reverse leakage current is specified at 3 mA at 35 V. The component is designed for chassis mounting and comes in a Three Tower package. Operating junction temperature ranges from -55°C to 150°C. This diode array is suitable for applications requiring high current rectification and fast switching speeds, often found in power supply and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 200 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 35 V |
Request a Quote
Clients Also Buy
GD2X75MPS17N
DIODE MOD SIC 1700V 115A SOT227
GD2X30MPS12D
DIODE ARR SIC 1200V 55A TO247-3
MBRTA50060
DIODE MOD SCHOTT 60V 250A 3TOWER
