MBRTA40035L
DIODE MOD SCHOTT 35V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRTA40035L is a Schottky diode module featuring a common cathode configuration. This component is rated for a repetitive peak reverse voltage (Vrrm) of 35V and a continuous average forward current (Io) of 200A per diode. It exhibits a low forward voltage drop (Vf) of 600mV at 200A, contributing to efficient power conversion. The reverse leakage current is specified at 3mA at 35V. Engineered for robust performance, it operates across a junction temperature range of -55°C to 150°C. The MBRTA40035L is housed in a Three Tower package for chassis mounting, ensuring effective thermal management in demanding applications. This diode array is commonly utilized in power supply units, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 200 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 35 V |
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