MBRT60040L
DIODE MOD SCHOTT 40V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT60040L Schottky Diode Module. This three-tower, chassis-mount device features a common cathode dual diode configuration with a maximum DC reverse voltage of 40V. Each diode offers a typical forward voltage drop of 600mV at a continuous forward current of 300A. The reverse leakage current is rated at 5mA at 40V. Operating junction temperatures range from -55°C to 150°C. This component is suitable for high-power rectification applications found in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 5 mA @ 40 V |
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