MBRT60030RL
DIODE MOD SCHOTT 30V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT60030RL is a Schottky diode array featuring a common anode configuration. This component is designed for high-current applications, with an average rectified current (Io) per diode of 300A and a maximum DC reverse voltage (Vr) of 30V. The forward voltage drop (Vf) is specified at 580mV at 300A. Reverse leakage current is rated at 3mA at 30V. The MBRT60030RL utilizes a Three Tower package for chassis mounting, facilitating efficient thermal management. Operating temperature range is -55°C to 150°C. This device is suitable for use in power supply circuits, motor control, and industrial power conversion applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 30 V |
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