MBRT60030L
DIODE MOD SCHOTT 30V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT60030L is a Schottky diode array featuring a common cathode configuration with two diodes. This component is designed for high-power rectification with a maximum DC reverse voltage of 30V and an average rectified current of 300A per diode. The forward voltage drop is a low 580mV at 300A, contributing to efficient operation. Reverse leakage is rated at 3mA at 30V. The MBRT60030L utilizes a Three Tower package for chassis mounting, facilitating robust thermal management. This device operates across a junction temperature range of -55°C to 150°C and is suitable for applications in power supplies, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 30 V |
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