MBRT60020RL
DIODE MOD SCHOTT 20V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT60020RL is a Schottky diode array featuring a common anode configuration. This component is designed for high current applications, boasting an average rectified current (Io) of 300A per diode. The forward voltage drop (Vf) is specified at a maximum of 580 mV at 300A, and the reverse leakage current is 3 mA at 20V.
The MBRT60020RL is housed in a robust three-tower chassis mount package, suitable for demanding thermal environments with an operating junction temperature range of -55°C to 150°C. Its fast recovery characteristics, with a speed of less than 500ns for currents greater than 200mA, make it well-suited for power factor correction and inverter applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 20 V |
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