MBRT60020L
DIODE MOD SCHOTT 20V 300A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT60020L is a Schottky diode array featuring a 1 pair common cathode configuration. This component is rated for a maximum DC reverse voltage of 20V and boasts a substantial average rectified current of 300A per diode. The forward voltage drop is specified at a maximum of 580mV at 300A. Designed for robust performance, it operates efficiently across a junction temperature range of -55°C to 150°C. The device exhibits a reverse leakage current of 3mA at 20V. Its fast recovery time is characterized as less than or equal to 500ns for currents greater than 200mA. The MBRT60020L is supplied in a Three Tower package for chassis mounting and is delivered in bulk packaging. This diode array is suitable for applications in industrial power supplies, electric vehicle charging, and high-power rectification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 300 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 20 V |
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