MBRT50080
DIODE MOD SCHOTT 80V 250A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT50080 is an Electronic Component featuring a Schottky diode array configured as one pair common cathode. This device offers a maximum DC reverse voltage (Vr) of 80 V and a substantial average rectified current (Io) per diode of 250 A. The forward voltage (Vf) is rated at 880 mV at 250 A. Designed for efficient power management, it operates within a junction temperature range of -55°C to 150°C. The component utilizes a three-tower package suitable for chassis mounting, ensuring robust thermal performance. Its fast recovery characteristics, with speeds less than or equal to 500ns for currents greater than 200mA, make it well-suited for applications in industrial power supplies, electric vehicle charging, and renewable energy systems. The reverse leakage current is specified at 1 mA at 20 V.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 250A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 250 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 20 V |
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