MBRT500200R
DIODE MOD SCHOT 200V 250A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT500200R is a Schottky diode array featuring a common anode configuration. This component offers a maximum DC reverse voltage of 200V and a substantial forward current capability of 250A per diode, with a typical forward voltage drop of 920mV at this current. The diode array is designed for high-power applications, operating within a junction temperature range of -55°C to 150°C. Its fast recovery time, specified as less than 500ns for currents greater than 200mA, makes it suitable for demanding switching applications. The MBRT500200R is housed in a robust Three Tower package for efficient thermal management and chassis mounting. This device is commonly employed in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 250A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 250 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 200 V |
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