MBRT40035RL
DIODE MOD SCHOTT 35V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT40035RL is a Schottky diode array featuring a common anode configuration. This device offers a maximum DC reverse voltage of 35V and a substantial average rectified current of 200A per diode. The forward voltage drop at 200A is a low 600mV. Designed for efficient operation, it exhibits a reverse leakage of 3mA at 35V. The MBRT40035RL is packaged in a Three Tower configuration for chassis mounting, facilitating robust thermal management. It operates across a junction temperature range of -55°C to 150°C. This component is suitable for applications in power supply, automotive, and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 200 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 35 V |
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