MBRT40030RL
DIODE MOD SCHOTT 30V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT40030RL Schottky Diode Array. This component features a common anode configuration with two diodes, delivering 200A average rectified current per diode at a 30V reverse voltage. The forward voltage drop is a maximum of 580mV at 200A. Designed for demanding applications, it exhibits a reverse leakage of 3mA at 30V. The MBRT40030RL is housed in a Three Tower chassis mount package, suitable for industrial power supplies, electric vehicle charging, and renewable energy systems. It operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 200 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 30 V |
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