MBRT30030L
DIODE MOD SCHOTT 30V 150A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MBRT30030L is a Schottky diode array featuring a common cathode configuration. This component is designed for high-power applications, offering a maximum DC reverse voltage of 30V and an average rectified current of 150A per diode. The forward voltage drop is specified at 580mV at 150A. Operating across a junction temperature range of -55°C to 150°C, the MBRT30030L exhibits a reverse leakage current of 3mA at 30V. The device's fast recovery characteristic, with a speed rating of less than or equal to 500ns for currents greater than 200mA, makes it suitable for demanding power switching applications. Packaged in a Three Tower configuration for chassis mounting, this diode array finds use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 150A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 150 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 30 V |
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