GE2X10MPS06D
DIODE ARR SIC 650V 23A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor SiC Schottky MPS™ GE2X10MPS06D is a dual diode array featuring two 650V, 23A Silicon Carbide Schottky diodes in a common-cathode configuration. This through-hole component, housed in a TO-247-3 package, offers exceptional performance characteristics for demanding applications. Its Silicon Carbide technology ensures low forward voltage drop and zero reverse recovery time above 500mA, contributing to higher efficiency and reduced switching losses. The operating junction temperature range of -55°C to 175°C makes it suitable for power conversion systems in industrial, automotive, and renewable energy sectors. The array's robust design and high-performance parameters are ideal for power factor correction, inverters, and high-frequency switching power supplies.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 23A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
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