GC2X8MPS12-247
DIODE ARR SIC 1200V 40A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor GC2X8MPS12-247 SiC Schottky MPS™ diode array in a TO-247-3 package. This component features a 1200 V reverse voltage rating and a per-diode forward current handling capability of 40 A (DC). It exhibits a low forward voltage drop of 1.8 V at 8 A and a reverse leakage current of 7 µA at 1200 V. The GC2X8MPS12-247 is configured as a common cathode pair and is designed with zero reverse recovery time for currents exceeding 500 mA (Io). Operating over a junction temperature range of -55°C to 175°C, this through-hole mounted device is suitable for applications in power conversion, electric vehicle charging, and industrial motor drives.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 40A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 7 µA @ 1200 V |
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