GC2X5MPS12-247
DIODE ARR SIC 1200V 27A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor GC2X5MPS12-247 is a SiC Schottky MPS™ diode array featuring a 1200V reverse voltage capability and 27A average rectified current per diode. This through-hole component, housed in a TO-247-3 package, exhibits a low forward voltage of 1.8V at 5A and a minimal reverse leakage current of 4µA at its maximum reverse voltage. The device boasts zero reverse recovery time for currents greater than 500mA, characteristic of its Silicon Carbide Schottky technology. Applications for this diode array include high-efficiency power conversion systems, electric vehicle charging, industrial power supplies, and renewable energy infrastructure. The operating junction temperature ranges from -55°C to 175°C.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 27A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 4 µA @ 1200 V |
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