GC2X20MPS12-247
DIODE ARR SIC 1200V 90A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor's GC2X20MPS12-247 is a SiC Schottky MPS™ diode array featuring a 1200V reverse voltage capability and 90A average rectified current (Io) per diode. This common cathode configuration diode array offers a low forward voltage of 1.8V at 20A and exhibits zero reverse recovery time, even for currents exceeding 500mA. Constructed with Silicon Carbide (SiC) Schottky technology, it operates across a junction temperature range of -55°C to 175°C. The component is housed in a TO-247-3 package for through-hole mounting. Applications for this device span industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. Its robust design and high-performance characteristics make it suitable for demanding power conversion applications where efficiency and reliability are paramount.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 90A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 18 µA @ 1200 V |
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