GC2X15MPS12-247
DIODE ARR SIC 1200V 75A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor's SiC Schottky MPS™ diode array, part number GC2X15MPS12-247, offers a 1200V reverse voltage rating with a 75A average rectified current capability per diode. This common cathode configuration features a low forward voltage drop of 1.8V at 15A, characteristic of its Silicon Carbide Schottky technology. The device boasts a minimal reverse leakage current of 14 µA at its maximum reverse voltage and exhibits effectively zero reverse recovery time above 500mA. Designed for through-hole mounting in a TO-247-3 package, it operates across a junction temperature range of -55°C to 175°C. This component is suitable for demanding power applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 75A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Current - Reverse Leakage @ Vr | 14 µA @ 1200 V |
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