GC2X10MPS12-247
DIODE ARR SIC 1200V 50A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
Quality Control: Learn More
GeneSiC Semiconductor's GC2X10MPS12-247 is a Silicon Carbide (SiC) Schottky Diode Array from the SiC Schottky MPS™ series. This component features a 1 Pair Common Cathode configuration, providing a DC reverse voltage rating of 1200 V and an average rectified forward current of 50 A per diode. The forward voltage drop (Vf) is a maximum of 1.8 V at 10 A. Engineered with SiC technology, this device exhibits zero reverse recovery time for currents greater than 500mA (Io). The diode array is housed in a TO-247-3 through-hole package, suitable for applications requiring high voltage and high current switching. Operating junction temperatures range from -55°C to 175°C. This component finds application in power conversion systems, electric vehicle charging, industrial power supplies, and renewable energy infrastructure.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 50A (DC) |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
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