GC2X100MPS06-227
DIODE MOD SIC 650V 209A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor SiC Schottky MPS™ GC2X100MPS06-227 is a diode array featuring two independent 650V, 209A (DC) Silicon Carbide Schottky diodes. This component, housed in a SOT-227-4 miniBLOC package, offers a low forward voltage of 1.8V at 50A and negligible reverse recovery time, exceeding 500mA (Io). The device exhibits a reverse leakage current of 20 µA at 650V and operates across a junction temperature range of -55°C to 175°C. Its chassis mount design is suitable for demanding applications in power conversion, electric vehicles, and industrial power supplies.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 209A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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