GB2X50MPS17-227
DIODE MOD SIC 1700V 136A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor SiC Schottky MPS™ diode array, part number GB2X50MPS17-227, offers a robust solution for high-voltage, high-power applications. This SOT-227-4 (miniBLOC) package houses two independent Silicon Carbide Schottky diodes, each rated for 1700 V DC reverse voltage and 136 A average rectified current. Exhibiting minimal reverse leakage of 50 µA at 1700 V and a remarkably low forward voltage drop of 1.8 V at 50 A, this device boasts zero reverse recovery time, enabling faster switching speeds and reduced switching losses. The chassis mount design facilitates efficient thermal management, with an operating junction temperature range of -55°C to 175°C. This component is ideal for demanding sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 136A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1700 V |
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