GB2X50MPS12-227
DIODE MOD SIC 1200V 93A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor GB2X50MPS12-227 is a SiC Schottky MPS™ diode array featuring two independent 1200V, 93A (DC) diodes. This component is housed in a SOT-227-4, miniBLOC package with a chassis mount for efficient thermal management. Key specifications include a forward voltage (Vf) of 1.8V at 50A and an extremely low reverse leakage of 40 µA at 1200V. The device exhibits zero reverse recovery time for currents greater than 500mA, a characteristic of its Silicon Carbide Schottky technology. The operating junction temperature range is -55°C to 175°C. This diode array is suitable for applications in high-power conversion, electric vehicle charging, and industrial power supplies where efficiency and robust performance are critical.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 93A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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