GB2X100MPS12-227
DIODE MOD SIC 1200V 185A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor SiC Schottky MPS™ diode array, part number GB2X100MPS12-227, features two independent 1200 V, 185 A (DC) Schottky diodes. This component, housed in a SOT-227-4 miniBLOC package for chassis mounting, offers a low forward voltage of 1.8 V at 100 A and a minimal reverse leakage of 80 µA at 1200 V. Its Silicon Carbide Schottky technology provides zero reverse recovery time above 500 mA, contributing to high-efficiency operation and suitability for demanding applications. The operating junction temperature range is -55°C to 175°C. This device is commonly utilized in power conversion systems, electric vehicle charging, industrial motor drives, and renewable energy applications where high voltage and current handling with minimal switching losses are critical.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 2 Independent |
| Current - Average Rectified (Io) (per Diode) | 185A (DC) |
| Supplier Device Package | SOT-227 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 1200 V |
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