GB10SLT12-247D
DIODE ARR SIC SCHOT 1200V TO247Manufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor GB10SLT12-247D is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component is housed in a TO-247-3 package. It offers a maximum DC reverse voltage rating of 1200 V and an average rectified current capability of 12 A per diode. The forward voltage drop is specified at a maximum of 1.9 V at 5 A. Reverse leakage current is minimal, rated at 50 µA at 1200 V. Operating junction temperature ranges from -55°C to 175°C. This device is suitable for applications requiring high voltage and efficient switching, commonly found in power supply, motor drive, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 12A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 5 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
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