

Manufacturer: GE Aerospace
Categories: FET, MOSFET Arrays
Quality Control: Learn More
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 3.75kW |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.275kA |
| Input Capacitance (Ciss) (Max) @ Vds | 82nF @ 600V |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 3621nC @ 18V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
| Supplier Device Package | Module |