GE12160CEA3
SIC 2N-CH 1200V 1.425KA MODULManufacturer: GE Aerospace
Categories: FET, MOSFET Arrays
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GE Aerospace SiC Power series GE12160CEA3 is a 2-channel Silicon Carbide MOSFET array designed for high-power applications. This chassis mount module features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 1.425kA at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 1.5mOhm at 475A and 20V. Key parameters include a gate charge (Qg) of 3744nC at 18V and an input capacitance (Ciss) of 90000pF at 600V. With a maximum power dissipation of 3.75kW (Tc) and an operating temperature range of -55°C to 150°C (Tc), this component is suitable for demanding applications in industrial power, electric vehicles, and renewable energy systems.
Additional Information
Series: SiC PowerRoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 3.75kW (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
| Supplier Device Package | Module |
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